DNW-Controllable Triggered Voltage of the Integrated Diode Triggered SCR (IDT-SCR) ESD Protection Device

被引：0
|
作者：
Lai, Da-Wei [1 ]
Tseng, Wei-Jhih [1 ]
de Raad, Gijs [1 ]
Smedes, Theo [1 ]
机构：
[1] NXP Semicond, Gerstweg 2, NL-6534 AE Nijmegen, Netherlands
来源：
2017 39TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD) | 2017年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel Integrated Diode Triggered SCR (IDT-SCR), with low capacitance (<200fF), and a controllable V-T1 is proposed for 1.8V application. The triggering is determined by the DNW biasing plus one integrated diode. The fail-current density is 16 times higher, and leakage 20 times lower, compared to a traditional capacitive-triggered bigFET.
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页数：9
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