On "pure self-heating effect" of MOSFET in SOI

被引：0

作者：

Zheng, TL ^{[1
]}

Luo, JS ^{[1
]}

Zhang, X ^{[1
]}

机构：

[1] Xian Jiaotong Univ, Inst Microelect, Xian 710049, Peoples R China

来源：

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrothermal simulation of high-voltage MOSFET in thin SOI for self-heating effects is performed by means of MIDICI, a commercial 2-D numerical simulator. By varying thermal conductivity of the buried oxide, we can extract the self-heating effects merely from the great rise in thermal resistance of the substrate, which are defined as the pure self-heating effect. The pure self-heating in SOI MOSFET is also presented for universality of the concept.

引用

页码：665 / 668

页数：4

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