Analysis of Self-heating Effect in a SOI LDMOS Device under an ESD Stress

被引：0
|
作者：
Li, Tianxing [1 ,2 ]
Cao, Jian [1 ,2 ]
Zhang, Lizhong [2 ]
Wang, Yuan [2 ]
机构：
[1] Peking Univ, Sch Software & Microelect, Beijing 102600, Peoples R China
[2] Peking Univ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China
来源：
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The analysis of self-heating effect in a SOI LOMOS device under an ESO stress is presented in this paper. TCAO tools are used as the platform to explore the physical process of the bulk LOMOS device and the influence of buried oxide layer inserted in the substrate. Simulation results uncover that the buried oxide layer degrades the current-handling ability and changes the lattice temperature distribution of the LOMOS device, which makes the low ESO robustness of the SOI LOMOS device.
引用
收藏
页码：459 / 461
页数：3
相关论文
共 50 条
  • [1] Investigation of Self-heating Effect in SOI-LDMOS by Device Simulation
    Lun, Zhiyuan
    Du, Gang
    Qin, Jieyu
    Wang, Yijiao
    Wang, Juncheng
    Liu, Xiaoyan
    [J]. 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 582 - 584
  • [2] Modelling of self-heating effect in thin SOI and Partial SOI LDMOS power devices
    Lim, HT
    Udrea, F
    Garner, DM
    Milne, WI
    [J]. SOLID-STATE ELECTRONICS, 1999, 43 (07) : 1267 - 1280
  • [3] Analysis of self-heating effect and breakdown characteristics in partial SOI LDMOS with multi silicon windows
    Gao Shan
    Chen Junning
    Ke Daoming
    Fang Miao
    [J]. ASICON 2007: 2007 7TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2007, : 1237 - 1240
  • [4] Reliability improvements in SOI-like MOSFET with ESD and self-heating effect
    Cao, Fei
    Shan, Chan
    Wang, Ying
    Luo, Xin
    Yu, Cheng-hao
    [J]. MICRO & NANO LETTERS, 2018, 13 (12): : 1649 - 1652
  • [5] ANALYTICAL DEVICE MODEL OF SOI MOSFETS INCLUDING SELF-HEATING EFFECT
    YASUDA, N
    UENO, S
    TANIGUCHI, K
    HAMAGUCHI, C
    YAMAGUCHI, Y
    NISHIMURA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3677 - 3684
  • [6] AN ACCURATE LARGE-SIGNAL MODEL FOR RF SOI LDMOS INCLUDING SELF-HEATING EFFECT
    Wang, Huang
    Sun, Lingling
    Yu, Zhiping
    Liu, Jun
    [J]. CIICT 2008: PROCEEDINGS OF CHINA-IRELAND INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATIONS TECHNOLOGIES 2008, 2008, : 225 - +
  • [7] Study of novel techniques for reducing self-heating effects in SOI power LDMOS
    Roig, J
    Flores, D
    Hidalgo, S
    Vellvehi, M
    Rebollo, J
    Millán, J
    [J]. SOLID-STATE ELECTRONICS, 2002, 46 (12) : 2123 - 2133
  • [8] Self-heating effect in SOI MOSFET's
    Tsinghua Univ, Beijing, China
    [J]. International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 572 - 574
  • [9] Self-heating effect in SOI MOSFET's
    Sun, ZM
    Liu, LT
    Li, ZJ
    [J]. 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 572 - 574
  • [10] On "pure self-heating effect" of MOSFET in SOI
    Zheng, TL
    Luo, JS
    Zhang, X
    [J]. SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 665 - 668
12345