Resistive switching with self-rectifying behavior in Cu/SiOx/Si structure fabricated by plasma-oxidation

被引：30
|
作者：
Tang, G. S. [1 ]
Zeng, F. [1 ]
Chen, C. [1 ]
Liu, H. Y. [1 ]
Gao, S. [1 ]
Li, S. Z. [1 ]
Song, C. [1 ]
Wang, G. Y. [1 ]
Pan, F. [1 ]
机构：
[1] Tsinghua Univ, Sch Mat Sci & Engn, Lab Adv Mat MOE, Beijing 100084, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 24期
基金：
中国国家自然科学基金;
关键词：
HIGH-DENSITY; XPS;
D O I：
10.1063/1.4812318
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a resistive switching memory structure based on silicon wafers by employing both materials and processing fully compatible with complementary metal-oxide semiconductor technology. A SiOx nanolayer was fabricated by direct plasma-oxidation of silicon wafers at room-temperature. Resistive switching behaviors were investigated on both p- and n-Si wafers, whereas self-rectifying effect was obtained in the Cu/SiOx/n-Si structure at low-resistance state. The self-rectifying effect was explained by formation of the Schottky barrier between the as-formed Cu filament and the n-Si. These results suggest a convenient and cost-efficient technical-route to develop high-density resistive switching memory for nowadays Si-based semiconductor industry. (C) 2013 AIP Publishing LLC.
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页数：5
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