Resistive switching with self-rectifying behavior in Cu/SiOx/Si structure fabricated by plasma-oxidation

被引：30

作者：

Tang, G. S. ^{[1
]}

Zeng, F. ^{[1
]}

Chen, C. ^{[1
]}

Liu, H. Y. ^{[1
]}

Gao, S. ^{[1
]}

Li, S. Z. ^{[1
]}

Song, C. ^{[1
]}

Wang, G. Y. ^{[1
]}

Pan, F. ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, Lab Adv Mat MOE, Beijing 100084, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 24期

基金：

中国国家自然科学基金;

关键词：

HIGH-DENSITY; XPS;

D O I：

10.1063/1.4812318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a resistive switching memory structure based on silicon wafers by employing both materials and processing fully compatible with complementary metal-oxide semiconductor technology. A SiOx nanolayer was fabricated by direct plasma-oxidation of silicon wafers at room-temperature. Resistive switching behaviors were investigated on both p- and n-Si wafers, whereas self-rectifying effect was obtained in the Cu/SiOx/n-Si structure at low-resistance state. The self-rectifying effect was explained by formation of the Schottky barrier between the as-formed Cu filament and the n-Si. These results suggest a convenient and cost-efficient technical-route to develop high-density resistive switching memory for nowadays Si-based semiconductor industry. (C) 2013 AIP Publishing LLC.

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页数：5

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