Self-rectifying resistive switching characteristics of Ti/Zr3N2/p-Si capacitor for array applications

In this study, we present a self-rectifying resistive switching property observed in Ti/Zr3N2/p-Si and Ti/Zr2N/p-Si metal-insulator-semiconductor (MIS) capacitors for array applications. Compared to the Zr2N film, the Zr3N2 film has a higher trap density due to weaker bonding energy and a higher trap generation rate. In the experimental results for the Zr3N2 sample, we observed a higher on/off ratio, a larger read margin, more stable retention, and more stable DC cycling. In addition, both the trap concentrations increased at the LRS compared to of the common HRS, which was a result of analyzing the nitride trap density (Nnt) within the ZrxNy film and an interface trap (Nit) between the ZrxNy and the p-Si layers. Particularly, it is found in the Zr3N2 film that the Nnt is rapidly increased, which results in an increased current ratio and an increased read margin.