PAT-Noxim: A Precise Power & Thermal Cycle-Accurate NoC Simulator

被引:0
|
作者
Norollah, Amin [1 ]
Derafshi, Danesh [1 ]
Beitollahi, Hakem [1 ]
Patooghy, Ahmad [2 ]
机构
[1] Iran Univ Sci & Technol, Dept Comp Engn, Tehran, Iran
[2] Univ Cent Arkansas, Dept Comp Sci, Conway, AR USA
关键词
Energy Efficiency; Temperature Effect Inversion; Design Space Exploration; Network-on-Chip; PERFORMANCE; NETWORK;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ever increasing number of on-chip cores magnifies the need for efficient Network on Chip (NoC) architecture designs. To have a wide design space exploration, accurate simulators play a key role to estimate power consumption, area and temperature profile of NoCs. Access-Noxim as one of the well-known NoC simulators is used by several researchers to perform cycle-accurate simulations for different NoC architectures. However, this simulator lacks power and thermal accuracy due to ignoring the temperature/power cross impact which is also known as Temperature Effect Inversion. This paper presents PAT-Noxim, to address this source of inaccuracy in the Access-Noxim simulator. PAT-Noxim uses architecture-level tools to calculate power consumption and area more accurately with considering the power/temperature cross impact. PAT-Noxim simulator now supports several architectural alternatives including pipelined and non-pipelined routers, and arbitrary number of virtual channels per each port. In addition, the PAT-Noxim renders results for a wide ranges of VLSI fabrication technologies from 90 nm down to 22 nm. Obtained results by the PAT-Noxim simulator indicate 5.45% and 11.6% more accuracy in estimation of power consumption and temperature parameters respectively.
引用
收藏
页码:163 / 168
页数:6
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