Compact steady-state self-heating model for a thin SOI LIGBT

被引：0
|
作者：
Gamage, S. [1 ]
Pathirana, V. [1 ]
Udrea, F. [1 ]
机构：
[1] Univ Cambridge, Cambridge, England
来源：
CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE | 2005年 / 1-2卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Several vertical IGBT electro-thermal models are currently available on circuit simulators [1], [2]. However, no reliable electro-thermal models have been proposed for the lateral IGBT (LIGBT). In this paper we present a novel steady-state electrothermal model for a LIGBT on thin Silicon-On-Insulator (SOI) technology. The model is fully assessed against experimental results and numerical simulations.
引用
收藏
页码：311 / 314
页数：4
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