Compact steady-state self-heating model for a thin SOI LIGBT

被引：0

作者：

Gamage, S. ^{[1
]}

Pathirana, V. ^{[1
]}

Udrea, F. ^{[1
]}

机构：

[1] Univ Cambridge, Cambridge, England

来源：

CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE | 2005年 / 1-2卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several vertical IGBT electro-thermal models are currently available on circuit simulators [1], [2]. However, no reliable electro-thermal models have been proposed for the lateral IGBT (LIGBT). In this paper we present a novel steady-state electrothermal model for a LIGBT on thin Silicon-On-Insulator (SOI) technology. The model is fully assessed against experimental results and numerical simulations.

引用

页码：311 / 314

页数：4

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