Proton induced multilevel storage capability in self-assembled indium-zinc-oxide thin-film transistors

被引：9
|
作者：
Guo, Li Qiang [1 ]
Wan, Chang Jin [1 ,2 ]
Zhu, Li Qiang [1 ]
Wan, Qing [1 ,2 ]
机构：
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 11期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
FIELD-EFFECT TRANSISTORS; MEMORY DEVICES;
D O I：
10.1063/1.4821067
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multilevel memory capability of self-assembled indium-zinc-oxide (IZO) electric-double-layer (EDL) thin-film transistors gated by nanogranular SiO2 proton conducting electrolytes is investigated. More than four distinct memory states are obtained by programming gate voltage. The observed multilevel storage behavior is mainly due to the controlled interfacial electrochemical doping of IZO channel by penetrated protons under programmed gate voltages. In addition, such IZO-based EDL transistor multilevel memory exhibits good characteristics of programming/erasing endurance and data retention. Such oxide-based EDL transistors with proton-induced multilevel memory behavior are interesting for low-cost memory and neuromorphic system applications after further properties and size optimization. (C) 2013 AIP Publishing LLC.
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页数：5
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