Proton induced multilevel storage capability in self-assembled indium-zinc-oxide thin-film transistors

被引：9

作者：

Guo, Li Qiang ^{[1
]}

Wan, Chang Jin ^{[1
,2
]}

Zhu, Li Qiang ^{[1
]}

Wan, Qing ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 11期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; MEMORY DEVICES;

D O I：

10.1063/1.4821067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multilevel memory capability of self-assembled indium-zinc-oxide (IZO) electric-double-layer (EDL) thin-film transistors gated by nanogranular SiO2 proton conducting electrolytes is investigated. More than four distinct memory states are obtained by programming gate voltage. The observed multilevel storage behavior is mainly due to the controlled interfacial electrochemical doping of IZO channel by penetrated protons under programmed gate voltages. In addition, such IZO-based EDL transistor multilevel memory exhibits good characteristics of programming/erasing endurance and data retention. Such oxide-based EDL transistors with proton-induced multilevel memory behavior are interesting for low-cost memory and neuromorphic system applications after further properties and size optimization. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 50 条

[31] The highly electrical performances of flexible indium-zinc-oxide based thin-film transistors on stability improvement by passivation layer
Wang, Cheng-Jyun
You, Hsin-Chiang
Ko, Fu-Hsiang
MICROELECTRONIC ENGINEERING, 2017, 177 : 87 - 92
[32] Aluminum Oxide/Fluoride Self-Assembled Monolayer Double Gate Dielectric for Solution-Processed Indium Oxide Thin-Film Transistors
Xiao-Lin Wang
Fei Shan
Han-Lin Zhao
Jae-Yun Lee
Suchang Yoo
Heung Gyoon Ryu
Seungkeun Choi
Tukhtaev Anvar
Sung-Jin Kim
Electronic Materials Letters, 2022, 18 : 423 - 430
[33] Indium-Zinc-Oxide Neuron Thin Film Transistors Laterally Coupled by Sodium Alginate Electrolytes
Wan, Changjin
Li, Bingjun
Feng, Ping
Zhu, Liqiang
Shi, Yi
Wan, Qing
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (10) : 3958 - 3963
[34] Preparation of Indium-Zinc-Oxide Thin Film Transistors by Hot-Pressing Sintering Target
Song Er-Long
Lan Lin-Feng
Lin Zhen-Guo
Sun Sheng
Song Wei
Li Yu-Zhi
Gao Pei-Xiong
Zhang Peng
Peng Jun-Biao
ACTA PHYSICO-CHIMICA SINICA, 2017, 33 (10) : 2092 - 2098
[35] Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors
Song, Yang
Katsman, Alexander
Butcher, Amy L.
Paine, David C.
Zaslavsky, Alexander
SOLID-STATE ELECTRONICS, 2017, 136 : 43 - 50
[36] Transparent thin-film transistors with zinc indium oxide channel layer
Dehuff, NL
Kettenring, ES
Hong, D
Chiang, HQ
Wager, JF
Hoffman, RL
Park, CH
Keszler, DA
JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)
[37] Amorphous Indium-Zinc Oxide Semiconductor Thin-Film Transistors
Li, Jun-Yi
Chang, Sheng-Po
Hua, Wen-Chen
Chang, Shoou-Jinn
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2014, 9 (03) : 388 - 391
[38] Effect of Zinc Oxide Nanowires on the Electrical Performance of Indium Zinc Oxide Thin-Film Transistors
Choi, Seungil
Lim, Yooseng
Jang, Min Hyung
Park, Ji In
Hwang, Nam Kyung
Yi, Moonsuk
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (11) : 7917 - 7920
[39] Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide
Li, Yuzhi
Lan, Linfeng
Xiao, Peng
Lin, Zhenguo
Sun, Sheng
Song, Wei
Song, Erlong
Gao, Peixiong
Wang, Dan
Ning, Honglong
Peng, Junbiao
RSC ADVANCES, 2015, 5 (63): : 51440 - 51445
[40] Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors
Xifeng Li
Qian Li
Enlong Xin
Jianhua Zhang
Journal of Sol-Gel Science and Technology, 2013, 65 : 130 - 134

← 1 2 3 4 5 →