Design and Performance Analysis of Low Frequency CMOS Ring Oscillator Using 90nm Technology

被引：0
|
作者：
Ramakrishna, Balaji S. [1 ]
Yalpi, Shivananda [1 ]
Kumar, Nithin L. [1 ]
Ravindra, H. B. [1 ]
Ram, Chaina [1 ]
机构：
[1] Dayananda Sagar Coll Engn, Dept Elect & Elect Engn, Bangalore 78, Karnataka, India
来源：
2016 IEEE INTERNATIONAL CONFERENCE ON RECENT TRENDS IN ELECTRONICS, INFORMATION & COMMUNICATION TECHNOLOGY (RTEICT) | 2016年
关键词：
Low Frequency Ring Oscillator; CMOS Thyristor; Current Mirror; Thyristorized-Current Mirror;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This Paper presents a new approach to design the Thyristorized low frequency CMOS ring oscillator which produces oscillations of 1 Hz range. It consists of CMOS Thyristor structure with current mirror designed to produce oscillations of low frequency which acquires lesser device space compared with conventional N stage ring oscillators. The aspect ratio and device parameters are designed with 90nm technology to obtain the desired oscillations. Then to analyze the performance of the oscillator the effect of variation of voltage on frequency and the effect of temperature variation on frequency is studied and simulation results are presented.
引用
收藏
页码：1796 / 1801
页数：6
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