Flexible Amorphous Indium-Tin-Zinc Oxide (a-ITZO) Thin-Film Transistors on Polyimide Substrate

被引：0
|
作者：
Yang, Dae-Gyu [1 ]
Kim, Jong-Heon [1 ]
Kim, Hyoung-Do [1 ]
Kim, Hyun-Suk [1 ]
机构：
[1] Chungnam Natl Univ, Mat Sci & Engn, Daeduck 305764, Daejeon, South Korea
来源：
2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2017年
基金：
新加坡国家研究基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The amorphous Indium-Tin-Zinc Oxide (a-ITZO) was fabricated by using direct-current (DC) sputtering method. Electrical and chemical properties of a-ITZO thin film transistors (TFTs) fabricated on the polyimide (PI) substrate were investigated. The a-ITZO TFTs on the PI substrate exhibited the saturation field effect mobility of 8.93 cm(2)/Vs, subthreshold swing of 0.38 V/decade and high on/off current ratio of similar to 10(8). Stability under the negative bias stress (NBS), negative bias illumination stress (NBIS) and positive bias stress (PBS) was evaluated.
引用
收藏
页码：165 / 168
页数：4
相关论文
共 50 条
  • [1] Flexible amorphous oxide thin-film transistors on polyimide substrate for AMOLED
    Xu, Zhiping
    Li, Min
    Xu, Miao
    Zou, Jianhua
    Gao, Zhuo
    Pang, Jiawei
    Guo, Ying
    Zhou, Lei
    Wang, Chunfu
    Fu, Dong
    Peng, Junbiao
    Wang, Lei
    Cao, Yong
    [J]. OPTOELECTRONIC DEVICES AND INTEGRATION V, 2014, 9270
  • [2] Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors
    Lee, Ki Chang
    Jo, Kwang-Min
    Sung, Sang-Yun
    Lee, Joon-Hyung
    Kim, Jeong-Joo
    Jeong, Byoung-Seong
    Pearton, S. J.
    Norton, D. P.
    Heo, Young-Woo
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (02):
  • [3] Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer
    Grover, M. S.
    Hersh, P. A.
    Chiang, H. Q.
    Kettenring, E. S.
    Wager, J. F.
    Keszler, D. A.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (05) : 1335 - 1338
  • [4] Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide
    Xia, Zhihe
    Lu, Lei
    Li, Jiapeng
    Feng, Zhuoqun
    Deng, Sunbin
    Wang, Sisi
    Kwok, Hoi Sing
    Wong, Man
    [J]. IEEE ELECTRON DEVICE LETTERS, 2017, 38 (07) : 894 - 897
  • [5] Mechanical Stress Stability of Flexible Amorphous Zinc Tin Oxide Thin-Film Transistors
    Lahr, Oliver
    Steudel, Max
    von Wenckstern, Holger
    Grundmann, Marius
    [J]. FRONTIERS IN ELECTRONICS, 2021, 2
  • [6] Electrical Properties of Amorphous Zinc-Indium-Tin Oxide Semiconductor Thin-Film Transistors
    Li, Chih-Wei
    Chang, Sheng-Po
    Chang, Shoou-Jinn
    [J]. NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2014, 6 (04) : 273 - 278
  • [7] Amorphous Indium-Zinc Oxide Semiconductor Thin-Film Transistors
    Li, Jun-Yi
    Chang, Sheng-Po
    Hua, Wen-Chen
    Chang, Shoou-Jinn
    [J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2014, 9 (03) : 388 - 391
  • [8] Self-Aligned Amorphous Indium-Tin-Zinc-Oxide Thin Film Transistors on Polyimide Foil
    Upadhyay, Rishabh
    Steudel, Soeren
    Mai-Phi Hung
    Mandal, Akhilesh Kumar
    Catthoor, Francky
    Nag, Manoj
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (04) : P185 - P191
  • [9] Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique
    Xu, Xin
    Zhang, Letao
    Shao, Yang
    Chen, Zheyuan
    Le, Yong
    Zhang, Shengdong
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (03) : 1072 - 1077
  • [10] Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate
    Hyung, Gun Woo
    Park, Jaehoon
    Wang, Jian-Xun
    Lee, Ho Won
    Li, Zhao-Hui
    Koo, Ja-Ryong
    Kwon, Sang Jik
    Cho, Eou-Sik
    Kim, Woo Young
    Kim, Young Kwan
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (07)
12345