Flexible Amorphous Indium-Tin-Zinc Oxide (a-ITZO) Thin-Film Transistors on Polyimide Substrate

被引：0
|
作者：
Yang, Dae-Gyu [1 ]
Kim, Jong-Heon [1 ]
Kim, Hyoung-Do [1 ]
Kim, Hyun-Suk [1 ]
机构：
[1] Chungnam Natl Univ, Mat Sci & Engn, Daeduck 305764, Daejeon, South Korea
来源：
2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2017年
基金：
新加坡国家研究基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The amorphous Indium-Tin-Zinc Oxide (a-ITZO) was fabricated by using direct-current (DC) sputtering method. Electrical and chemical properties of a-ITZO thin film transistors (TFTs) fabricated on the polyimide (PI) substrate were investigated. The a-ITZO TFTs on the PI substrate exhibited the saturation field effect mobility of 8.93 cm(2)/Vs, subthreshold swing of 0.38 V/decade and high on/off current ratio of similar to 10(8). Stability under the negative bias stress (NBS), negative bias illumination stress (NBIS) and positive bias stress (PBS) was evaluated.
引用
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页码：165 / 168
页数：4
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