Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide

被引：17
|
作者：
Xia, Zhihe [1 ]
Lu, Lei [1 ]
Li, Jiapeng [1 ]
Feng, Zhuoqun [1 ]
Deng, Sunbin [1 ]
Wang, Sisi [1 ]
Kwok, Hoi Sing [1 ]
Wong, Man [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 07期
关键词：
Indium-tin-zinc oxide (ITZO); thin-film transistors (TFTs); low off-state current; elevated-metal;
D O I：
10.1109/LED.2017.2707090
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the distinct effects of oxidizing thermal annealing on the properties of zinc oxide and indium-gallium-zinc oxide (IGZO) under covers of different gas-permeabilities, the elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) architecture has been proposed and demonstrated using IGZO as the channel material. However, the speculation that the EMMO architecture is more generally applicable to semiconducting metal oxides other than IGZO has yet to be verified. Presently reported is an EMMO TFT with a modified structure employing indium-tin-zinc oxide as the channel material. The resulting TFT exhibited good performance metrics: a relatively higher field-effect mobility of 23.2 +/- 0.8 cm(2)/Vs, an ON/OFF current ratio of at least 3.1 x 10(10), a pseudo subthreshold slope of 165 +/- 15mV/decade, a width-normalized OFF-state current of at most 8.1 x 10(-19)A/mu m, and robust stability against gate-bias stress.
引用
收藏
页码：894 / 897
页数：4
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