Degradation of Elevated-Metal Metal-Oxide Thin-Film Transistors Under AC Bias Stress

被引：0
|
作者：
Yang, Yilin [1 ]
Yin, Xiangyuan [1 ]
Wang, Mingxiang [1 ]
Zhang, Dongli [1 ]
机构：
[1] Soochow Univ, Sch Elect & Informat Engn, Suzhou 215006, Peoples R China
来源：
2018 9TH INTHERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN FOR THIN-FILM TRANSISTORS (CAD-TFT) | 2018年
基金：
中国国家自然科学基金;
关键词：
amorphous indium-gallium-zinc oxide; thin-film transistors; dynamic degradation; acceptor-like trap states;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
Stability of conventional and elevated-metal metaloxide (EMMO) amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under AC bias stress is investigated. Superior stability of the EMMO TFTs is observed and attributed to the reduced deep acceptor-like trap states.
引用
收藏
页码：20 / 20
页数：1
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