Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate

被引：12

作者：

Hyung, Gun Woo ^{[1
]}

Park, Jaehoon ^{[2
]}

Wang, Jian-Xun ^{[3
]}

Lee, Ho Won ^{[1
]}

Li, Zhao-Hui ^{[3
]}

Koo, Ja-Ryong ^{[1
]}

Kwon, Sang Jik ^{[3
]}

Cho, Eou-Sik ^{[3
]}

Kim, Woo Young ^{[4
]}

Kim, Young Kwan ^{[1
]}

机构：

[1] Hongik Univ, Dept Informat Display, Seoul 121791, South Korea

[2] Hallym Univ, Dept Elect Engn, Chunchon 200702, South Korea

[3] Gachon Univ, Dept Elect Engn, Songnam 416701, Gyeonggi, South Korea

[4] Hoseo Univ, Dept Green Energy & Semicond Engn, Asan 336795, Chungnam, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

TFTS;

D O I：

10.7567/JJAP.52.071102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a solution-processed polymeric gate dielectric of cross-linked poly(4-vinylphenol) (c-PVP) film were fabricated on a poly(ethylene terephthalate) (PET) substrate on which an a-IGZO film, as the active channel layer, was deposited by radio frequency (RF) sputtering. The entire TFT fabrication process was carried out at a temperature below 110 degrees C. The device exhibited an on/off ratio of 1.5 x 10(6) and a high field-effect mobility of 10.2 cm(2) V-1 s(-1), which is, to our knowledge, the best result ever achieved among a-IGZO TFTs with polymeric gate dielectrics on a plastic substrate. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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