Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors

被引：10

作者：

Deen, David A. ^{[1
]}

Champlain, James G. ^{[2
]}

Koester, Steven J. ^{[1
]}

机构：

[1] Univ Minnesota, Elect & Comp Engn Dept, Minneapolis, MN 55455 USA

[2] Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期

关键词：

D O I：

10.1063/1.4818754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Graphene field effect transistors and capacitors that employ ultra-thin atomic layer deposited high-kappa TiO2 dielectrics are demonstrated. Of the three TiO2 gate insulation schemes employed, the sequentially deposited HfO2:TiO2 gate insulator stack enabled the reduction of equivalent oxide thickness while simultaneously providing an ultra-thin gate insulation layer that minimized gate leakage current. The multilayer gate insulation scheme demonstrates a means for advanced device scaling in graphene-based devices. (C) 2013 AIP Publishing LLC.

引用

页数：4

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