Metal gate MOSFETs with HfO2 gate dielectric

被引：26

作者：

Samavedam, SB ^{[1
]}

Tseng, HH ^{[1
]}

Tobin, PJ ^{[1
]}

Mogab, J ^{[1
]}

Dakshina-Murthy, S ^{[1
]}

La, LB ^{[1
]}

Smith, J ^{[1
]}

Schaeffer, J ^{[1
]}

Zavala, M ^{[1
]}

Martin, R ^{[1
]}

Nguyen, BY ^{[1
]}

Hebert, L ^{[1
]}

Adetutu, O ^{[1
]}

Dhandapani, V ^{[1
]}

Luo, TY ^{[1
]}

Garcia, R ^{[1
]}

Abramowitz, P ^{[1
]}

Moosa, M ^{[1
]}

Gilmer, DC ^{[1
]}

Hobbs, C ^{[1
]}

Taylor, WJ ^{[1
]}

Grant, JM ^{[1
]}

Hedge, R ^{[1
]}

Bagchi, S ^{[1
]}

Luckowski, E ^{[1
]}

Arunachalam, V ^{[1
]}

Azrak, M ^{[1
]}

机构：

[1] Digital DNA Labs, AMD, Austin, TX 78712 USA

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report for the first time electrical characterization of HfO2 p- and n-MOSFETs with CVD TiN and PVD TaSiN gates respectively fabricated using conventional CMOS integration. Their performance is compared to PVD TiN-gated HfO2 and SiO2 n- and p-MOSFETs. To understand the issues with metal gates on high K gate dielectrics, PVD TiN MOSFETs were extensively characterized. At 10nA/pm leakage, 0.345mA/pm drive current was obtained from PVD TiN/HfO2 p-MOSFETs. HfO2 n-MOSFETs with metal gates show about 104 times reduction in gate leakage compared to poly/SiO2. devices.

引用

页码：24 / 25

页数：2

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