Very high hole mobility in p-type Si/SiGe modulation-doped heterostructures

被引：2
|
作者：
Tsai, WC
Chang, CY
Huang, GW
Fang, FF
Chang, YH
Huang, CF
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECT,HSINCHU,TAIWAN
[2] NATL TAIWAN UNIV,CTR CONDENSED MATTER SCI,TAIPEI 10764,TAIWAN
[3] NATL TAIWAN UNIV,DEPT PHYS,TAIPEI 10764,TAIWAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 3B期
关键词：
modulation-doped heterostructure; Shubnikov de Hass oscillation; quantum Hall effect; two-dimension hole gas; hole effective mass;
D O I：
10.1143/JJAP.36.L323
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, high-quality Si/Si1-xGex/Si p-type modulation-doped heterostructures were grown by ultrahigh-vacuum/chemical vapor deposition (UHV/CVD). High-field magnetotransport measurements revealed Shubnikov-de Hass oscillations in the longitudinal magneto resistance and the integer quantum Hall effect in transverse magnetoresistance illustrating the presence of a well-confined two-dimensional hole gas. The mobilities of the two-dimensional hole gas, as high as 12500 cm(2)/V . s at 0.65 K, were obtained for normal (doped layer at surface side) modulation-doped heterostructures with x = 0.12 at a sheet carrier concentration of 3.45 x 10(11) cm(-2). In addition, for this heterostructure, temperature-dependent measurements of Shubnikov-de Hass oscillations in the range 0.65 K-2.4 K were taken and the hole effective mass of 0.295m(0) + 0.01m(0) was obtained.
引用
收藏
页码：L323 / L326
页数：4
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