Electrical characterisation of AlCuMo thin films prepared by DC magnetron sputtering

被引：6

作者：

Birkett, M. ^{[1
]}

Brooker, J. ^{[1
]}

Penlington, R. ^{[2
]}

Wilson, A. ^{[2
]}

Tan, K. ^{[2
]}

机构：

[1] TT Elect Welwyn Components Ltd, Bedlington NE22 7AA, Northd, England

[2] Northumbria Univ, Sch Comp Engn & Informat Sci, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England

来源：

IET SCIENCE MEASUREMENT & TECHNOLOGY | 2008年 / 2卷 / 05期

关键词：

D O I：

10.1049/iet-smt:20070076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin film resistors have been manufactured to evaluate the electrical performance characteristics of AlCuMo thin films. The films were prepared on Al2O3 substrates at room temperature as a function of Mo concentration by DC magnetron sputtering and were then annealed at various temperatures in air and N-2 atmospheres. The effect of annealing temperature on the electrical properties of the films was systematically investigated. Increase in Mo content produced a decrease in temperature coefficient of resistance (TCR), an increase in resistivity (rho) and an improvement in long term stability (Delta Omega/Omega) of the films. TCR varied from negative to positive and further improvements in resistance stability of the films were also achieved through increasing annealing temperature in both air and N-2 atmospheres. A temperature region is proposed where 'near zero' TCR (ppm/degrees C) and long term stability of better than 0.2% can be realised.

引用

页码：304 / 309

页数：6

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