Electrical characterisation of AlCuMo thin films prepared by DC magnetron sputtering

被引：6
|
作者：
Birkett, M. [1 ]
Brooker, J. [1 ]
Penlington, R. [2 ]
Wilson, A. [2 ]
Tan, K. [2 ]
机构：
[1] TT Elect Welwyn Components Ltd, Bedlington NE22 7AA, Northd, England
[2] Northumbria Univ, Sch Comp Engn & Informat Sci, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England
来源：
IET SCIENCE MEASUREMENT & TECHNOLOGY | 2008年 / 2卷 / 05期
关键词：
D O I：
10.1049/iet-smt:20070076
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin film resistors have been manufactured to evaluate the electrical performance characteristics of AlCuMo thin films. The films were prepared on Al2O3 substrates at room temperature as a function of Mo concentration by DC magnetron sputtering and were then annealed at various temperatures in air and N-2 atmospheres. The effect of annealing temperature on the electrical properties of the films was systematically investigated. Increase in Mo content produced a decrease in temperature coefficient of resistance (TCR), an increase in resistivity (rho) and an improvement in long term stability (Delta Omega/Omega) of the films. TCR varied from negative to positive and further improvements in resistance stability of the films were also achieved through increasing annealing temperature in both air and N-2 atmospheres. A temperature region is proposed where 'near zero' TCR (ppm/degrees C) and long term stability of better than 0.2% can be realised.
引用
收藏
页码：304 / 309
页数：6
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