The impact of postbreakdown gate leakage on MOSFET RF performances

被引：18

作者：

Pantisano, L ^{[1
]}

Cheung, KP

机构：

[1] IMEC, Louvain, Belgium

[2] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 12期

关键词：

high frequency; MOSFET; oxide breakdown; reliability;

D O I：

10.1109/55.974585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

When the gate-oxide of a MOSFET breaks down, a leakage path is created between channel and gate. In this work, we demonstrate that a simple leakage current increase model can predict the impact of gate-oxide breakdown on MOSFET performance from de to microwave frequency. We show that severe reduction in RF performance due to input/output mismatch and a gain reduction can result from gate-oxide breakdown.

引用

页码：585 / 587

页数：3

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