The impact of postbreakdown gate leakage on MOSFET RF performances

被引:18
|
作者
Pantisano, L [1 ]
Cheung, KP
机构
[1] IMEC, Louvain, Belgium
[2] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA
关键词
high frequency; MOSFET; oxide breakdown; reliability;
D O I
10.1109/55.974585
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
When the gate-oxide of a MOSFET breaks down, a leakage path is created between channel and gate. In this work, we demonstrate that a simple leakage current increase model can predict the impact of gate-oxide breakdown on MOSFET performance from de to microwave frequency. We show that severe reduction in RF performance due to input/output mismatch and a gain reduction can result from gate-oxide breakdown.
引用
收藏
页码:585 / 587
页数:3
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