Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers

被引：39
|
作者：
Hader, J [1 ]
Bossert, D
Stohs, J
Chow, WW
Koch, SW
Moloney, JV
机构：
[1] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA
[2] USAF, Phillips Lab, Kirtland AFB, NM 87117 USA
[3] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[4] Sandia Natl Labs, Albuquerque, NM 87185 USA
[5] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[6] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期
关键词：
D O I：
10.1063/1.123823
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The linewidth enhancement factor in single quantum-well graded index separate confinement heterostructure semiconductor lasers is investigated theoretically and experimentally. For thin wells, a small linewidth enhancement factor is obtained which clamps with increasing carrier density, in contrast to the monotonous increase observed for thicker wells. Microscopic many-body calculations reproduce the experimental observations attributing the clamping to excitation dependent gain shifts and the influence of the population of off-resonant states on the refractive index. (C) 1999 American Institute of Physics. [S0003-6951(99)04016-4].
引用
收藏
页码：2277 / 2279
页数：3
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