Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers

被引：5
|
作者：
Stohs, J
Gallant, DJ
Bossert, DJ
Brueck, SRJ
机构：
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V | 1997年 / 2994卷
关键词：
linewidth enhancement factor; differential gain; index shift; quantum well lasers;
D O I：
10.1117/12.275604
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The linewidth enhancement factor, alpha, plays a key role in our ability to obtain spatially coherent output from high-power semiconductor lasers and amplifiers. To obtain alpha values, modal gain and carrier-induced refractive index change have been measured in broad-area quantum well epitaxial structures with various well depths, widths, and compositions as functions of current density.
引用
收藏
页码：542 / 551
页数：10
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