Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers

被引：9

作者：

Zhang Fan ^{[1
]}

Li Lin ^{[1
]}

Ma Xiao-Hui ^{[1
]}

Li Zhan-Guo ^{[1
]}

Sui Qing-Xue ^{[2
]}

Gao Xin ^{[1
]}

Qu Yi ^{[1
]}

Bo Bao-Xue ^{[1
]}

Liu Guo-Jun ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

[2] Equipment Headquarters PLA, Changchun Reg Off, Armored Forces Representat Bur, Changchun 130103, Peoples R China

来源：

ACTA PHYSICA SINICA | 2012年 / 61卷 / 05期

基金：

中国国家自然科学基金;

关键词：

InGaAs/GaAs; linewidth enhancement factor; strained quantum well; gain; OPTICAL GAIN; GROUP INDEX; DESIGN;

D O I：

10.7498/aps.61.054209

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A simple model of calculating the linewidth enhancement factor (alpha factor) is presented by introducing the correlative theory and its conversion formula of the alpha factor in detail. The contributions of interband transition, free carrier absorption and band gap narrowing to the alpha factor are taken into account. Carrier concentration and differential gain dependence of photon energy are obtained from the gain curves for different carrier concentrations. The gain curves and the alpha factor of InGaAs/GaAs quantum well are simulated, Separately, and the results accord well with those reported in the literature. Subsequently discussed are two important parameters of InGaAs/GaAs quantum well laser containing quantum Well Width and In mole fraction. The results show that the increase of two parameters leads the alpha factor to increase.

引用

页数：7

共 26 条

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