Study of self-heating effects in GaNHEMTs

被引：0
|
作者：
Nuttinck, S [1 ]
Gebara, E [1 ]
Laskar, J [1 ]
Harris, M [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Elect Engn, Atlanta, GA 30332 USA
来源：
2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pulsed RF and IV characterizations are performed on power GaN HEMTs. These measurements are carried out at different temperatures for the first time to understand self-heating effects and to investigate the possibility of improving heat dissipation mechanisms. These measurements are the basis for robust large-signal models.
引用
收藏
页码：2151 / 2154
页数：4
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