Impact of ambient temperature on the self-heating effects in FinFETs

We use an electro-thermal coupled Monte Carlo simulation framework to investigate the self-heating effect（SHE） in 14 nm bulk n Fin FETs with ambient temperature（T;） from 220 to 400 K. Based on this method, nonlocal heat generation can be achieved. Contact thermal resistances of Si/Metal and Si/Si O;are selected to ensure that the source and drain heat dissipation paths are the first two heat dissipation paths. The results are listed below:（i） not all input power(Q;turns into heat generation in the device region and some is taken out by the thermal non-equilibrium carriers, owing to the serious non-equilibrium transport;（ii） a higher T;leads to a larger ratio of input power turning into heat generation in the device region at the same operating voltages;（iii） SHE can lead to serious degradation in the carrier transport, which will increase when T;increases;（iv） the current degradation can be 8.9% when V;= 0.7 V, V;= 1 V and TA = 400 K;（v） device thermal resistance(R;) increases with increasing of T;, which is seriously impacted by the non-equilibrium transport. Hence, the impact of TA should be carefully considered when investigating SHE in nanoscale devices.