Study of self-heating effects in GaNHEMTs

被引：0

作者：

Nuttinck, S ^{[1
]}

Gebara, E ^{[1
]}

Laskar, J ^{[1
]}

Harris, M ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Elect Engn, Atlanta, GA 30332 USA

来源：

2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulsed RF and IV characterizations are performed on power GaN HEMTs. These measurements are carried out at different temperatures for the first time to understand self-heating effects and to investigate the possibility of improving heat dissipation mechanisms. These measurements are the basis for robust large-signal models.

引用

页码：2151 / 2154

页数：4

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