Self-organized Ge quantum wires on Si(111) substrates

被引：2
|
作者：
Jin, G [1 ]
Tang, YS [1 ]
Liu, JL [1 ]
Wang, KL [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1999年 / 17卷 / 04期
关键词：
D O I：
10.1116/1.581828
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Self-organized Ge quantum wires have been grown on regular atomic steps formed along [(1) over bar 10] direction on Si(111) substrates by annealing at 870 degrees C in vacuum. The Samples have been studied by ex situ atomic force microscopy (AFM). Raman scattering and low temperature photoluminescence spectroscopy. The AFM results suggest that the mechanism of the formation of the wires be the evolution of self-organized lined-up quantum dots. Good quality Ge quantum wires have been formed and clear quantum confinement-induced quantization in the wires has been observed. (C) 1999 American Vacuum Society. [S0734-2101(99)00704-6].
引用
下载
收藏
页码：1406 / 1409
页数：4
相关论文
共 50 条
  • [41] Circularly organized quantum dot nanostructures of Ge on Si substrates
    Cai, Qijia
    Chen, Peixuan
    Zhong, Zhenyang
    Jiang, Zuimin
    Lu, Fang
    An, Zhenghua
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (09)
  • [42] Study of phonons in self-organized multiple Ge quantum dots
    Liu, JL
    Jin, G
    Tang, YS
    Luo, YH
    Lu, Y
    Wang, KL
    Yu, DP
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) : 554 - 556
  • [43] New optical properties of Ge self-organized quantum dots
    Peng, CS
    Huang, Q
    Zhang, YH
    Cheng, WQ
    Sheng, TT
    Tung, CH
    Zhou, JM
    THIN SOLID FILMS, 1998, 323 (1-2) : 174 - 177
  • [44] Study of phonons in self-organized multiple Ge quantum dots
    J. L. Liu
    G. Jin
    Y. S. Tang
    Y. H. Luo
    Y. Lu
    K. L. Wang
    D. P. Yu
    Journal of Electronic Materials, 2000, 29 : 554 - 556
  • [45] Growth and electrical characterization of self-organized InAs quantum wires on InP
    Walther, C
    Erxmeyer, J
    Schippel, E
    Hoering, L
    Masselink, WT
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 195 - 198
  • [46] Self-organized quantum wires and dots in III-V semiconductors
    Asahi, H
    ADVANCED MATERIALS, 1997, 9 (13) : 1019 - +
  • [47] Self-organized quantum wires and dots: New opportunities for device applications
    Ledentsov, NN
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1997, 35 (2-4) : 289 - 305
  • [48] Structure and Photoluminescence Investigations of Self-organized InAs/GaAs Quantum Wires
    Kong Lingmin
    Zhang Cunxi
    Wang Rui
    Wang Shilai
    MULTI-FUNCTIONAL MATERIALS AND STRUCTURES II, PTS 1 AND 2, 2009, 79-82 : 1707 - 1710
  • [49] Growth and magnetism of self-organized Co nanoplatelets on Si(111) surface
    He, Ke
    Pan, Ming-Hu
    Wang, Jun-Zhong
    Liu, Hong
    Jia, Jin-Feng
    Xue, Qi-Kun
    SURFACE AND INTERFACE ANALYSIS, 2006, 38 (06) : 1028 - 1033
  • [50] Temperature dependence of self-organized growth of Ge quantum dots on Si substrate by VLP-CVD
    Wu, Jun
    Gu, Shulin
    Shi, Yi
    Jiang, Ning
    Zhu, Shunming
    Zheng, Youdou
    Wang, Mu
    Liu, Xiaoyong
    Min, Naiben
    Gaojishu Tongxin/High Technology Letters, 2000, 10 (04): : 34 - 37
12345