Self-organized quantum wires and dots in III-V semiconductors

被引：34
|
作者：
Asahi, H
机构：
[1] Inst. of Sci. and Indust. Research, Osaka University, Ibaraki, Osaka 567, 8-1, Mihogaoka
来源：
ADVANCED MATERIALS | 1997年 / 9卷 / 13期
关键词：
D O I：
10.1002/adma.19970091305
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Review: The fabrication of quantum wires and quantum dots in III-V semiconductors using self-organization phenomena is reviewed. The Stranski-Krastanov (S-K) mode growth, step-bunching, and strain-induced lateral composition modulation techniques are covered. The Figure shows the vertical stacking of islands that are formed by the alternate S-K mode growth of five cycles of an In(Ga) quantum dot layer and a GaAs spacer layer.
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页码：1019 / +
页数：1
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