Self-organized Ge quantum wires on Si(111) substrates

被引：2

作者：

Jin, G ^{[1
]}

Tang, YS ^{[1
]}

Liu, JL ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.581828

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-organized Ge quantum wires have been grown on regular atomic steps formed along [(1) over bar 10] direction on Si(111) substrates by annealing at 870 degrees C in vacuum. The Samples have been studied by ex situ atomic force microscopy (AFM). Raman scattering and low temperature photoluminescence spectroscopy. The AFM results suggest that the mechanism of the formation of the wires be the evolution of self-organized lined-up quantum dots. Good quality Ge quantum wires have been formed and clear quantum confinement-induced quantization in the wires has been observed. (C) 1999 American Vacuum Society. [S0734-2101(99)00704-6].

引用

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页码：1406 / 1409

页数：4

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