Ultrafast scanning tunneling microscopy using a photoexcited low-temperature-grown GaAs tip

被引：0

作者：

Donati, GP ^{[1
]}

Rodriguez, G ^{[1
]}

Taylor, AJ ^{[1
]}

机构：

[1] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

ULTRAFAST PHENOMENA XI | 1998年 / 63卷

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

We report ultrafast scanning tunneling microscopy using a low-temperature-grown GaAs tip photoexcited by 100-fs, 800-nm pulses. We use this tip to detect picosecond transients on a coplanar stripline and demonstrate a temporal resolution of 1.7 ps. A dependence of the transient signal upon spatial position of the tip is revealed, indicating that the signal arises from areas on the sample smaller than similar to 20 nm.

引用

页码：159 / 161

页数：3

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