Ultrafast scanning tunneling microscopy using a photoexcited low-temperature-grown GaAs tip

被引：0
|
作者：
Donati, GP [1 ]
Rodriguez, G [1 ]
Taylor, AJ [1 ]
机构：
[1] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA
来源：
ULTRAFAST PHENOMENA XI | 1998年 / 63卷
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D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
We report ultrafast scanning tunneling microscopy using a low-temperature-grown GaAs tip photoexcited by 100-fs, 800-nm pulses. We use this tip to detect picosecond transients on a coplanar stripline and demonstrate a temporal resolution of 1.7 ps. A dependence of the transient signal upon spatial position of the tip is revealed, indicating that the signal arises from areas on the sample smaller than similar to 20 nm.
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页码：159 / 161
页数：3
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