Refractive index and absorption changes in low-temperature-grown GaAs

被引：12

作者：

Loka, HS ^{[1
]}

Benjamin, SD ^{[1
]}

Smith, PWE ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

OPTICS COMMUNICATIONS | 1998年 / 155卷 / 1-3期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/S0030-4018(98)00341-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

For all-optical switching device design, the excitation pulse width is one of the essential features to be considered to achieve optimum operation. In this paper we investigate the effect of growth and annealing conditions and the excitation pulse width on refractive index and absorption changes in low-temperature-grown GaAs (LT-GaAs). We use our previously developed rate equation model to validate our interpretations for the different measurements. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：206 / 212

页数：7

共 50 条

[1] ANNEALING-INDUCED REFRACTIVE-INDEX AND ABSORPTION CHANGES OF LOW-TEMPERATURE-GROWN GAAS
DANKOWSKI, SU
KIESEL, P
KNUPFER, B
KNEISSL, M
DOHLER, GH
KEIL, UD
DYKAAR, DR
KOPF, RF
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (25) : 3269 - 3271
[2] Ultrafast dynamics of nonlinear absorption in low-temperature-grown GaAs
Benjamin, SD
Loka, HS
Othonos, A
Smith, PWE
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (18) : 2544 - 2546
[3] NOISE STUDIES OF HFETS ON LOW-TEMPERATURE-GROWN GAAS BUFFERS AND OF MESFETS WITH LOW-TEMPERATURE-GROWN GAAS PASSIVATION
VANRHEENEN, AD
LIN, Y
TEHRANI, S
CHEN, CL
SMITH, FW
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 82 - 85
[4] ROLE OF EXCESS AS IN LOW-TEMPERATURE-GROWN GAAS
WARREN, AC
WOODALL, JM
KIRCHNER, PD
YIN, X
POLLAK, F
MELLOCH, MR
OTSUKA, N
MAHALINGAM, K
[J]. PHYSICAL REVIEW B, 1992, 46 (08): : 4617 - 4620
[5] Terahertz photomixing in low-temperature-grown GaAs
Brown, ER
Verghese, S
McIntosh, KA
[J]. ADVANCED TECHNOLOGY MMW, RADIO, AND TERAHERTZ TELESCOPES, 1998, 3357 : 132 - 142
[6] The behavior of As precipitates in low-temperature-grown GaAs
Bourgoin, JC
Khirouni, K
Stellmacher, M
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (04) : 442 - 444
[7] Temperature dependence of the Fermi level in low-temperature-grown GaAs
Chen, YH
Yang, Z
Wang, ZG
Li, RG
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (15) : 1866 - 1868
[8] Native point defects in low-temperature-grown GaAs
[J]. Appl Phys Lett, 2 (279):
[9] ANNEALING STUDIES OF LOW-TEMPERATURE-GROWN GAAS-BE
BLISS, DE
WALUKIEWICZ, W
AGER, JW
HALLER, EE
CHAN, KT
TANIGAWA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) : 1699 - 1707
[10] DEFECTS AND ARSENIC DISTRIBUTION IN LOW-TEMPERATURE-GROWN GAAS
HOZHABRI, N
KOYMEN, AR
SHARMA, SC
ALAVI, K
[J]. APPLIED SURFACE SCIENCE, 1995, 85 (1-4) : 311 - 314

← 1 2 3 4 5 →