Ultrafast dynamics of nonlinear absorption in low-temperature-grown GaAs

被引：0
|
作者：
Benjamin, SD [1 ]
Loka, HS [1 ]
Othonos, A [1 ]
Smith, PWE [1 ]
机构：
[1] UNIV TORONTO,DEPT ELECT & COMP ENGN,TORONTO,ON M5S 1A1,CANADA
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 18期
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present the results of a study of the subpicosecond dynamic behavior of optically induced absorption changes in low-temperature-grown GaAs. We show that the observed behavior is dominated by mid-gap trap states, and can be accurately modeled by the rate equations previously developed to describe quasi-cw results. Our data give the first approximate values for trap emptying times in this material. (C) 1996 American Institute of Physics.
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页码：2544 / 2546
页数：3
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