Development of 6.5kV 50A 4H-SiC JBS diodes

被引：0
|
作者：
Chen, Yunfeng [1 ]
Tan, Ji [1 ]
Bai, Song [1 ]
Huang, Runhua [1 ]
Li, Rui [1 ]
机构：
[1] Nanjing Elect Devices Inst, State Key Lab Wide Bandgap Semicond Power Elect D, Nanjing, Jiangsu, Peoples R China
来源：
2018 15TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS) | 2018年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A study of 6.5kV 50A JBS diodes based on 4H-SiC were reported. These high voltage SiC JBS diodes utilized 65 um thick n-type epi-layers with a doping concentration of 1 x10(15) cm(-3). The active area and total chip area of the JBS diodes were 75mm(2) and 110mm(2). Meanwhile, the FGR structure of 700um was applied for controlling the edge termination electrical field of the JBS diodes. The JBS diodes were able to support a blocking voltage of 6.5 kV with leakage current lower than 1.5uA. Under forward bias of 3.70V, the forward current of the JBS diodes could reach 50A at room temperature. Barrier height and ideality factor of the JBS diodes were extracted to be 1.26eV and 1.03. High temperature (425K) characteristics of the JBS diodes were also measured and analyzed.
引用
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页码：120 / 122
页数：3
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