Development of 15 kV 4H-SiC IGBTs

被引：38
|
作者：
Ryu, Sei-Hyung [1 ]
Cheng, Lin [1 ]
Dhar, Sarit [1 ]
Capell, Craig [1 ]
Jonas, Charlotte [1 ]
Clayton, Jack [1 ]
Donofrio, Matt [1 ]
O'Loughlin, Michael [1 ]
Al Burk [1 ]
Agarwal, Anant [1 ]
Palmour, John [1 ]
机构：
[1] Cree Inc, Durham, NC USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
High Voltage; High Current; bipolar; IGBT;
D O I：
10.4028/www.scientific.net/MSF.717-720.1135
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present our latest developments in ultra high voltage 4H-SiC IGBTs. A 6.7 mm x 6.7 mm 4H-SiC N-IGBT with an active area of 0.16 cm(2) showed a blocking voltage of 12.5 kV, and demonstrated a room temperature differential specific on-resistance of 5.3 m Omega-cm(2) with a gate bias of 20 V. A 4H-SiC P-IGBT exhibited a record high blocking voltage of 15 kV, while showing a differential specific on-resistance of 24 m Omega-cm(2). A comparison between P- and N- IGBTs in 4H-SiC is provided in this paper.
引用
收藏
页码：1135 / 1138
页数：4
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