Demonstration of Lateral IGBTs in 4H-SiC

被引：15

作者：

Chu, Kuan-Wei ^{[1
]}

Lee, Wen-Shan ^{[1
]}

Cheng, Chi-Yin ^{[1
]}

Huang, Chih-Fang ^{[2
]}

Zhao, Feng ^{[3
]}

Lee, Lurng-Shehng ^{[4
]}

Chen, Young-Shying ^{[4
]}

Lee, Chwan-Ying ^{[4
]}

Tsai, Min-Jinn ^{[4
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Ctr Nanotechnol Mat Sci & Microsyst, Hsinchu 30013, Taiwan

[3] Washington State Univ, Sch Elect Engn & Comp Sci, Vancouver, WA 98686 USA

[4] Ind Technol Res Inst Taiwan, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期

关键词：

Common base current gain; high voltage; insulated gate bipolar transistor (IGBT); silicon carbide (SiC); RESISTANCE; MOSFETS;

D O I：

10.1109/LED.2012.2230240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lateral insulated gate bipolar transistors (IGBTs) in 4H-SiC are demonstrated for the first time. The devices were fabricated based on three different designs to investigate the effects of buffer doping and carrier lifetime on device performance. Experimental results show that, with a lightly doped buffer, a short drift region length, and an improved carrier lifetime, the common base current gain of the parasitic bipolar junction transistor (BJT) is improved, leading to a higher current capability of the IGBT. The differential on-resistance of the lateral IGBT with L-d = 20 mu m is smaller than that of a lateral MOSFET counterpart, implying partial conductivity modulation in the drift region.

引用

页码：286 / 288

页数：3

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