In GaN Multiple Quantum Well Solar Cells on a Patterned Sapphire Substrate

被引：0
|
作者：
Bi, Zhen [1 ,2 ,3 ]
Zhang, Jincheng [1 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China
[3] Xidian Univ, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China
来源：
PROCEEDINGS OF THE AASRI INTERNATIONAL CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (IEA 2015) | 2015年 / 2卷
关键词：
In GaN; multiple quantum wells; solar cells; conversion efficiency;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The performance In GaN/GaN multiple quantum wells solar cells on a patterned sapphire substrate (PSS) was investigated. Compare to the solar on a planar substrate, the In GaN/GaN multiple quantum wells (MQWs) solar cell grown on PSS exhibited a higher performance, with the conversion efficiency (eta) rising from 0.36% to 0.64%.
引用
收藏
页码：422 / 424
页数：3
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