Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells

被引：0
|
作者：
Chen, Xin [1 ]
Zhao, Bijun [2 ]
Li, Shuti [2 ]
机构：
[1] Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Peoples R China
[2] South China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Peoples R China
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 13期
基金：
中国国家自然科学基金;
关键词：
InGaN/GaN; solar cells; multiple quantum well; Si doping;
D O I：
10.1134/S1063782619130049
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The performance of InGaN/GaN multiple quantum well (MQW) solar cells with five different Si-doping concentrations, namely 0, 4 x 10(17) cm(-3), 1 x 10(18) cm(-3), 3 x 10(18) cm(-3) and 6 x 10(18) cm(-3), in GaN barriers is investigated. Increasing Si-doping concentration leads to better transport property, resulting in smaller series resistance (R-s). However, the crystal quality degrades when Si-doping concentration is over 1 x 10(18) cm(-3), which reduces the external quantum efficiency, short circuit current density and open circuit voltage. As a result, the sample with a slight Si-doping concentration of 4 x 10(17) cm(-3) exhibits the highest conversion efficiency.
引用
收藏
页码：1792 / 1796
页数：5
相关论文
共 50 条
  • [1] Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells
    Xin Chen
    Bijun Zhao
    Shuti Li
    [J]. Semiconductors, 2019, 53 : 1792 - 1796
  • [2] Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes
    Wu, LW
    Chang, SJ
    Wen, TC
    Su, YK
    Chen, JF
    Lai, WC
    Kuo, CH
    Chen, CH
    Sheu, JK
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (05) : 446 - 450
  • [3] Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells
    Wierer, J. J., Jr.
    Koleske, D. D.
    Lee, S. R.
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (11)
  • [4] Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells
    Cho, YH
    Schmidt, TJ
    Bidnyk, S
    Song, JJ
    Keller, S
    Mishra, UK
    DenBaars, SP
    [J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [5] Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well
    Liu, R
    Ponce, FA
    Sahonta, SL
    Cherns, D
    Amano, H
    Akasaki, I
    [J]. GAN AND RELATED ALLOYS - 2003, 2003, 798 : 775 - 780
  • [6] Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells
    Liu, Wei
    Zhao, Degang
    Jiang, Desheng
    Chen, Ping
    Shi, Dongping
    Liu, Zongshun
    Zhu, Jianjun
    Yang, Jing
    Li, Xiang
    Liang, Feng
    Liu, Shuangtao
    Xing, Yao
    Long, Heng
    Li, Mo
    [J]. IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 7 (04): : 1017 - 1023
  • [7] InGaN/GaN multiple quantum well concentrator solar cells
    Dahal, R.
    Li, J.
    Aryal, K.
    Lin, J. Y.
    Jiang, H. X.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (07)
  • [8] Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells
    Cho, YH
    Song, JJ
    Keller, S
    Minsky, MS
    Hu, E
    Mishra, UK
    DenBaars, SP
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1128 - 1130
  • [9] Modelling and Performance analysis of InGaN/GaN based Multiple Quantum Well solar cells
    Siddharth, Gaurav
    Singh, Ruchi
    Mukherjee, Shaibal
    [J]. 2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2020, : 98 - 100
  • [10] Improved properties of InGaN multiple quantum well purplish-blue laser diodes by Si-doping in the InGaN barriers
    Chichibu, S
    Cohen, D
    Mack, M
    Abare, A
    Kozodoy, P
    Minsky, M
    Fleischer, S
    Keller, S
    Bowers, J
    Mishra, U
    Coldren, L
    Clarke, D
    Denbaars, S
    [J]. BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 381 - 384
12345