Wideband 400 W Pulsed Power GaN HEMT Amplifiers

被引：0
|
作者：
Krishnamurthy, K. [1 ]
Martin, J. [1 ]
Landberg, B. [1 ]
Vetury, R. [1 ]
Poulton, M. J. [1 ]
机构：
[1] RF Micro Devices Inc, Aerosp & Def Business Unit, Charlotte, NC 28269 USA
来源：
2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年
关键词：
Power Amplifiers; Gallium Nitride (GaN); High-electron-mobility transistors (HEMTs); Broadband amplifiers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed 400 W pulsed output power GaN HEMT amplifiers with 2.9 - 3.5 GHz bandwidth. Operating the amplifier from a 65 V drain supply under pulsed operation with 10% duty cycle and 100 mu s pulse width obtains an output power in the range of 401 - 446 W over the band with a drain efficiency of 48 - 55%. The amplifier uses AlGaN/GaN HEMTs with a total device periphery of 44.4 mm and advanced source connected field plates for high breakdown voltage. These wideband high power amplifiers are suitable for use in pulsed radar applications.
引用
收藏
页码：302 / 305
页数：4
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