Bandwidth versus Efficiency Performance using Power Combining in GaN HEMT Power Amplifiers

被引：0

作者：

Preis, Sebastian ^{[1
]}

Arnous, Tareq ^{[1
]}

Zhang, Zihui ^{[1
]}

Saad, Paul ^{[1
]}

Boeck, Georg ^{[1
]}

机构：

[1] Berlin Inst Technol, Microwave Engn Lab, Berlin, Germany

来源：

2013 EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2013年

关键词：

broadband amplifier; galium nitride; HEMT; power amlifier; power combining;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transistors manufacturers are increasing the output power of their devices presently by enlarging the gate width of the transistors. This work discusses the tradeoff between the increased parasitic elements and the additional losses introduced by external power combining on board. Design goal of this work was to develop a 100 W power amplifier with optimum efficiency and maximum bandwidth. The first version is equipped with a single 100 W transistor. A second amplifier is realized using two power combined 50 W devices. The preliminary analysis is based on the theory of Bode and Fano. Using this approach the achievable bandwidth is predicted.

引用

页码：696 / 699

页数：4

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