A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology

被引：0
|
作者：
Campbell, Charles [1 ]
Lee, Cathy [1 ]
Williams, Victoria [1 ]
Kao, Ming-Yih [1 ]
Tserng, Hua-Quen [1 ]
Saunier, Paul [1 ]
机构：
[1] TriQuint Semicond, Richardson, TX USA
来源：
2008 IEEE CSIC SYMPOSIUM | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and performance of a wideband power amplifier MMIC suitable for electronic warfare (EW) systems and other wide bandwidth applications is presented. The amplifier utilizes dual field plate 0.25-mu m GaN on SiC device technology integrated into the three metal interconnect (3MI) process flow. Experimental results for the MMIC at 30V power supply operation demonstrate greater than 10 dB of small signal gain, 9W to 15W saturated output power and 20% to 38% peak power added efficiency over a 1.5GHz to 17GHz bandwidth.
引用
收藏
页码：132 / 135
页数：4
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