Laser drilling induced electrical type inversion in vacancy-doped p-type HgCdTe

被引：17
|
作者：
Zha, F. X. [1 ,2 ]
Zhou, S. M. [1 ]
Ma, H. L. [1 ]
Yin, F. [2 ]
Zhang, B. [2 ]
Li, T. X. [2 ]
Shao, J. [2 ]
Shen, X. C. [1 ,2 ]
机构：
[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Nat Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 15期
关键词：
D O I：
10.1063/1.3001930
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Femtosecond laser was used to generate micrometer-sized holes in vacancy-doped p type mercury cadmium telluride (HgCdTe). Characterization by laser beam induced current (LBIC) microscope shows obvious electrical type inversion around each hole. Both the intensity of the LBIC signals and the spatial dimension of the type-inversed regions are well comparable with those of n-on-p HgCdTe photodiodes formed by the conventional ion milling technique. The observation demonstrates the potential of laser drilling to be a new tool in fabricating HgCdTe photodiode arrays. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3001930]
引用
收藏
页数：3
相关论文
共 50 条
  • [41] DOUBLE INVERSION OF HALL COEFFICIENT OF P-TYPE INSB DOPED WITH FE AND NI
    VINOGRADOVA, KI
    NASLEDOV, DN
    SMETANNI.YS
    FELITSIA.VR
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (05): : 592 - +
  • [42] Dark current characterization of Au and Hg-vacancy hybrid doped p-type epitaxy long-wavelength HgCdTe infrared photodetectors
    Li, Qing
    Hu, Weida
    Lin, Chun
    Chen, Xiaoshuang
    Lu, Wei
    INFRARED TECHNOLOGY AND APPLICATIONS XLIV, 2018, 10624
  • [43] Electrical Properties of Li-doped P-type ZnO Ceramics
    A.H. Salama
    F.F. Hammad
    Journal of Materials Science & Technology, 2009, 25 (03) : 314 - 318
  • [44] ELECTRICAL CONDUCTIVITY AND THERMOELECTRIC POWER OF HEAVILY DOPED P-TYPE CDSB
    HRUBY, A
    KUBELIK, I
    STOURAC, L
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1965, 15 (10) : 740 - &
  • [45] Practical model for electrical properties of highly doped P-type polysilicon
    Spoutai, SV
    APEIE-98: 1998 4TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONIC INSTRUMENT ENGINEERING PROCEEDINGS, VOL 1, 1998, : 27 - 29
  • [46] Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe
    G. A. Umana-Membreno
    H. Kala
    J. Antoszewski
    Z. H. Ye
    W. D. Hu
    R. J. Ding
    X. S. Chen
    W. Lu
    L. He
    J. M. Dell
    L. Faraone
    Journal of Electronic Materials, 2013, 42 : 3108 - 3113
  • [47] Electrical transport phenomena in magnesium-doped p-type GaN
    Konczewicz, Leszek
    Litwin-Staszewska, Elzbieta
    Contreras, Sylvie
    Piotrzkowski, Ryszard
    Dmowski, Leslaw
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (03): : 658 - 663
  • [48] Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices
    Polyakov, A. Y.
    Smirnov, N. B.
    Govorkov, A. V.
    Shcherbatchev, K. D.
    Bublik, V. T.
    Voronova, M. I.
    Dabiran, Amir M.
    Osinsky, A. V.
    Pearton, S. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (01): : 69 - 73
  • [49] ELECTRICAL MEASUREMENTS OF BANDGAP SHRINKAGE IN HEAVILY DOPED P-TYPE GAAS
    KLAUSMEIERBROWN, ME
    MELLOCH, MR
    LUNDSTROM, MS
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (01) : 7 - 11
  • [50] Electrical properties of Li-doped P-type ZnO ceramics
    Salama, A.H.
    Hammad, F.F.
    Journal of Materials Science and Technology, 2009, 25 (03): : 314 - 318
12345