Laser drilling induced electrical type inversion in vacancy-doped p-type HgCdTe

被引：17

作者：

Zha, F. X. ^{[1
,2
]}

Zhou, S. M. ^{[1
]}

Ma, H. L. ^{[1
]}

Yin, F. ^{[2
]}

Zhang, B. ^{[2
]}

Li, T. X. ^{[2
]}

Shao, J. ^{[2
]}

Shen, X. C. ^{[1
,2
]}

机构：

[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Nat Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 15期

关键词：

D O I：

10.1063/1.3001930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Femtosecond laser was used to generate micrometer-sized holes in vacancy-doped p type mercury cadmium telluride (HgCdTe). Characterization by laser beam induced current (LBIC) microscope shows obvious electrical type inversion around each hole. Both the intensity of the LBIC signals and the spatial dimension of the type-inversed regions are well comparable with those of n-on-p HgCdTe photodiodes formed by the conventional ion milling technique. The observation demonstrates the potential of laser drilling to be a new tool in fabricating HgCdTe photodiode arrays. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3001930]

引用

页数：3

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