Laser drilling induced electrical type inversion in vacancy-doped p-type HgCdTe

被引：17
|
作者：
Zha, F. X. [1 ,2 ]
Zhou, S. M. [1 ]
Ma, H. L. [1 ]
Yin, F. [2 ]
Zhang, B. [2 ]
Li, T. X. [2 ]
Shao, J. [2 ]
Shen, X. C. [1 ,2 ]
机构：
[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Nat Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 15期
关键词：
D O I：
10.1063/1.3001930
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Femtosecond laser was used to generate micrometer-sized holes in vacancy-doped p type mercury cadmium telluride (HgCdTe). Characterization by laser beam induced current (LBIC) microscope shows obvious electrical type inversion around each hole. Both the intensity of the LBIC signals and the spatial dimension of the type-inversed regions are well comparable with those of n-on-p HgCdTe photodiodes formed by the conventional ion milling technique. The observation demonstrates the potential of laser drilling to be a new tool in fabricating HgCdTe photodiode arrays. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3001930]
引用
收藏
页数：3
相关论文
共 50 条
  • [31] A detailed calculation of the Auger lifetime in p-type HgCdTe
    Krishnamurthy, S
    Casselman, TN
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (06) : 828 - 831
  • [32] DARK CURRENT PROCESSES IN THINNED P-TYPE HGCDTE
    BLANKS, DK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1764 - 1769
  • [33] Ag doping of p-type HgCdTe grown by LPE
    Yu, QR
    Yang, JR
    Huang, GS
    Chen, XQ
    Xia, YB
    He, L
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2002, 21 (02) : 91 - 94
  • [34] Magneto-transport characterization of p-type HgCdTe
    Tsen, G. K. O.
    Musca, C. A.
    Dell, J. M.
    Antoszewski, J.
    Faraone, L.
    JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (08) : 826 - 831
  • [35] A detailed calculation of the auger lifetime in p-type HgCdTe
    S. Krishnamurthy
    T. N. Casselman
    Journal of Electronic Materials, 2000, 29 : 828 - 831
  • [36] Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxy
    Yang, B
    Aqariden, F
    Grein, CH
    Jandaska, A
    Lee, TS
    Nemani, A
    Rujirawat, S
    Shi, XH
    Sumstine, M
    Velicu, S
    Sivananthan, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 1205 - 1208
  • [37] Nanoimprint induced electrical type conversion in HgCdTe
    Martyniuk, M.
    Umana-Membreno, G. A.
    Sewell, R. H.
    Westerhout, R.
    Musca, C. A.
    Dell, J. M.
    Antoszewski, J.
    Faraone, L.
    Macintyre, D. S.
    Thoms, S.
    Ironside, C. N.
    PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010), 2010, : 17 - 18
  • [38] Ion-Beam-Induced Modification of the Electrical Properties of Vacancy-Doped Mercury Cadmium Telluride
    Izhnin, I. I.
    Dvoretsky, S. A.
    Mikhailov, N. N.
    Sidorov, Yu. G.
    Varavin, V. S.
    Pociask, M.
    Mynbaev, K. D.
    TECHNICAL PHYSICS LETTERS, 2008, 34 (11) : 981 - 984
  • [39] Ion-beam-induced modification of the electrical properties of vacancy-doped mercury cadmium telluride
    I. I. Izhnin
    S. A. Dvoretsky
    N. N. Mikhailov
    Yu. G. Sidorov
    V. S. Varavin
    M. Pociask
    K. D. Mynbaev
    Technical Physics Letters, 2008, 34 : 981 - 984
  • [40] Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe
    Umana-Membreno, G. A.
    Kala, H.
    Antoszewski, J.
    Ye, Z. H.
    Hu, W. D.
    Ding, R. J.
    Chen, X. S.
    Lu, W.
    He, L.
    Dell, J. M.
    Faraone, L.
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3108 - 3113
12345