Laser Dicing for Higher Chip Productivity

被引：0

作者：

Suzuki, Natsuki ^{[1
,2
,3
]}

Xiao Shiqin ^{[2
]}

Atsumi, Kazuhiro ^{[1
]}

Uchiyama, Naoki ^{[1
]}

Ohba, Takayuki ^{[2
]}

机构：

[1] Hamamatsu Photon KK, 314-5 Shimo Kanzo, Iwata, Shizuoka 4380193, Japan

[2] Tokyo Inst Technol, WOW Alliance, Midori Ku, 4259 Nagatsuda, Yokohama, Kanagawa 2268503, Japan

[3] Grad Sch Creat New Photon Ind, Nishi Ku, 1955-1 Kurematsu Cho, Hamamatsu, Shizuoka 4311202, Japan

来源：

2016 11TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT-IAAC 2016) | 2016年

关键词：

die singulation; laser; and aberration correction; WAFER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes increased chip productivity using a laser dicing technique called stealth dicing (SD), in which optimized aberration correction is applied. By optimizing aberration correction, the dicing street width is reduced to approximately one-fifth of that achievable by blade dicing (BD). With SD, the total number of 1 mm x 1 mm dies singulated from a wafer was 13.3 % higher than with BD. A cost evaluation of the singulation processes using SD and BD is discussed.

引用

页码：62 / 64

页数：3

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