Anodic oxidation lithography via atomic force microscope on organic resist layers

被引：0

作者：

Kim, Sung-Kyoung ^{[1
]}

Lee, Haiwon ^{[1
]}

机构：

[1] Hanyang Univ, Dept Chem, Seoul 133791, South Korea

来源：

POLYMER-KOREA | 2006年 / 30卷 / 03期

关键词：

atomic force microscope; nanolithography; anodic oxidation or anodization; organic resist; self-assembled monolayer; Langmuir-Blodgett film; polymer resist;

D O I：

暂无

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Atomic force microscope (AFM)-based anodic oxidation lithography has gained great interests in fabricating nanometer scale features on semiconductor or metal substrates beyond the limitation of optical lithography. In this article AFM anodic oxidation lithography and its organic resist layers are introduced based on our previous works. Organic resist layers of self-assembled monolayers, Langmuir-Blodgett films and polymer films are suggested to play a key role in enhancing the aspect ratio of producing features, the lithographic speed, and spatial precision in AFM anodic oxidation lithography.

引用

页码：187 / 195

页数：9

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